ZnSe-based MBE-grown photodiodes

A. Gerhard; J. Nürnberger; K. Schüll; V. Hock; C. Schumacher; M. Ehinger; W. Faschinger

doi:10.1016/s0022-0248(98)80272-8

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ZnSe-based MBE-grown photodiodes

A. Gerhard J. Nürnberger K. Schüll V. Hock C. Schumacher M. Ehinger W. Faschinger

Year: 1998 Journal: Journal of Crystal Growth Vol: 184-185 Pages: 1319-1323 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(98)80272-8

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Keywords:

Photocurrent Photodiode Molecular beam epitaxy Optoelectronics Responsivity Doping Schottky diode Dark current Materials science Quantum efficiency Schottky barrier Depletion region Diode Photoconductivity Chemistry Optics Semiconductor Epitaxy Layer (electronics) Physics Nanotechnology Photodetector

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnSe-based MBE-grown photodiodes

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