Ion-excited Auger electron emission from silicon

R. A. Powell

doi:10.1116/1.569844

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Ion-excited Auger electron emission from silicon

R. A. Powell

Year: 1978 Journal: Journal of Vacuum Science and Technology Vol: 15 (6)Pages: 1797-1799 Publisher: American Institute of Physics

DOI: 10.1116/1.569844

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Abstract

Auger electron emission from Si excited by ion bombardment with He+, Ne+, Ar+, and Xe+ are reported for ion energies in the range of 1 to 3 keV. The data supports the view that symmetric collisions between Si atoms in the sample are responsible for the observed Auger emission. The relative strength of atomiclike L2,3MM and bulk L2,3VV Auger features in the measured spectra were independent of both ion species and ion energy employed in this study.

Keywords:

Auger Atomic physics Ion Excited state Auger electron spectroscopy Auger effect Silicon Range (aeronautics) Electron Spectral line Chemistry Materials science Physics Nuclear physics Optoelectronics

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Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ion-excited Auger electron emission from silicon

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