JOURNAL ARTICLE

A monolithic pixel sensor (TRAPPISTe-2) for particle physics instrumentation in OKI 0.2μmSOI technology

L. Soung YeeP AlvarezE.R. MartinE. CortinaCarles Ferrer

Year: 2012 Journal:   Journal of Instrumentation Vol: 7 (12)Pages: C12028-C12028   Publisher: Institute of Physics

Abstract

A monolithic active pixel sensor for charged particle tracking has been developed within the frame of a research and development project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology). TRAPPISTe aims to study the feasibility of developing a monolithic pixel sensor with SOI technology. TRAPPISTe-2 is the second prototype in this series and was fabricated with an OKI 0.20μm fully depleted (FD-SOI) CMOS process. This device contains test transistors and amplifiers, as well as two pixel matrices with integrated 3-transistor and amplifier readout electronics. The results presented are based on the first electrical measurements performed on the test structures and laser measurements on the pixel matrices.

Keywords:
Pixel Silicon on insulator CMOS sensor Instrumentation (computer programming) Transistor Tracking (education) CMOS Amplifier Electronics Optoelectronics Electrical engineering Physics Materials science Optics Engineering Computer science Voltage Silicon

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Citation History

Topics

Particle Detector Development and Performance
Physical Sciences →  Physics and Astronomy →  Nuclear and High Energy Physics
CCD and CMOS Imaging Sensors
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Radiation Detection and Scintillator Technologies
Physical Sciences →  Physics and Astronomy →  Radiation

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