CeO₂films deposited by DC reactive magnetron sputtering

Abstract

The preparation of CeO2 thin films on sapphire by DC reactive magnetron sputtering of metallic Ce target in an argon-oxygen mixed gas is reported. The resputtering of the film deposited facing the target track was observed. The films deposited far from the sputtering system axis exhibited well-oriented crystalline structure and a smooth surface that allows the utilization of these films as sub-layers for further thin film growth. No substantial diffusion of Al into the CeO2 film was observed.