Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure

Abstract

LiBr/Si(001) heterostructure has been investigated by scanning tunneling microscopy and spectroscopy (STM and STS). In the initial stage of LiBr growth, rectangular islands are observed consisting of accumulation of about 0.2 nm-thick unit layers. The STM results indicate that LiBr grows on Si(001) in a single layer fashion. The STS measurement shows a wide band gap region in I-V curve and the energy gap of the LiBr film shows no thickness dependence down to a nominal thickness of 1.2 monolayer (ML).