Metal oxide-semiconductor capacitors on silicon carbide

R.C. Harris

doi:10.1016/0038-1101(76)90085-x

ScienceGate Book Chapters

JOURNAL ARTICLE

Metal oxide-semiconductor capacitors on silicon carbide

R.C. Harris

Year: 1976 Journal: Solid-State Electronics Vol: 19 (2)Pages: 103-105 Publisher: Elsevier BV

DOI: 10.1016/0038-1101(76)90085-x

Get Full-Text PDF Get Analytical Report

Keywords:

Silicon carbide Capacitor Materials science Silicon Carbide MOSFET Semiconductor Optoelectronics Engineering physics Oxide Electrical engineering Electronic engineering Nanotechnology Metallurgy Voltage Engineering Transistor

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.20

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal oxide-semiconductor capacitors on silicon carbide

Metrics

Topics

Related Documents

Reliability of metal-oxide-semiconductor capacitors on 6H-silicon carbide

Reliability of metal–oxide–semiconductor capacitors on nitrogen implanted 4H-silicon carbide

Electrical characterization of instabilities in 6H silicon carbide metal-oxide-semiconductor capacitors

Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide

Surface potential fluctuations in metal–oxide–semiconductor capacitors fabricated on different silicon carbide polytypes