Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide

Sang‐Mo Koo; S.-K Lee; Carl‐Mikael Zetterling; Mikael Östling

doi:10.1016/s0038-1101(02)00068-0

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Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide

Sang‐Mo Koo S.-K Lee Carl‐Mikael Zetterling Mikael Östling

Year: 2002 Journal: Solid-State Electronics Vol: 46 (9)Pages: 1375-1380 Publisher: Elsevier BV

DOI: 10.1016/s0038-1101(02)00068-0

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Keywords:

Silicon carbide Capacitor Materials science Optoelectronics Plasma Semiconductor Silicon Metal Oxide Engineering physics Composite material Metallurgy Electrical engineering Engineering

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide

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