JOURNAL ARTICLE
Corrections to “Predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs” [Oct 11 3379-3387]
Jibin ZouQiumin XuJ. L. LuoRunsheng WangRu HuangYangyuan Wang
Year: 2012 Journal: IEEE Transactions on Electron Devices Vol: 59 (3)Pages: 867-867 Publisher: Institute of Electrical and Electronics Engineers
Abstract
In the above titled paper (ibid., vol. 58, no. 10. pp. 3379-3387, Oct. 2011), there were several typo errors or missing symbols. Corrections are presented here.
Keywords:
Capacitance Materials science Silicon nanowires Silicon Optoelectronics Nanowire MOSFET Parasitic capacitance Electrical engineering Physics Voltage Engineering Transistor Electrode
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2
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Citation History
Topics
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon Carbide Semiconductor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Nanowire Synthesis and Applications
Physical Sciences → Engineering → Biomedical Engineering
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