Field-effect transistors using Langmuir–Blodgett films of neutral long-chain TCNQ derivatives

Hitoshi Ohnuki; Keiichi Ikegami; Tetsuya Ida; Mitsuru Izumi

doi:10.1016/j.colsurfa.2004.10.024

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Field-effect transistors using Langmuir–Blodgett films of neutral long-chain TCNQ derivatives

Hitoshi Ohnuki Keiichi Ikegami Tetsuya Ida Mitsuru Izumi

Year: 2004 Journal: Colloids and Surfaces A Physicochemical and Engineering Aspects Vol: 257-258 Pages: 381-384 Publisher: Elsevier BV

DOI: 10.1016/j.colsurfa.2004.10.024

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Keywords:

Alkyl Field-effect transistor Langmuir–Blodgett film Chain (unit) Semiconductor Absorption (acoustics) Molecule Infrared spectroscopy Transistor Materials science Absorption spectroscopy Field (mathematics) Spectroscopy Fabrication Polymer Chemistry Optoelectronics Organic chemistry Optics Physics Voltage

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Organic and Molecular Conductors Research

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Molecular Junctions and Nanostructures

Physical Sciences → Engineering → Electrical and Electronic Engineering

Organic Electronics and Photovoltaics

Physical Sciences → Engineering → Electrical and Electronic Engineering

Field-effect transistors using Langmuir–Blodgett films of neutral long-chain TCNQ derivatives

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