Molecular field-effect transistors using conducting polymer Langmuir–Blodgett films

Abstract

Thin-film field-effect transistors (FETs) have been prepared using poly(3-hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.