Design of four-transistor Pixel for high speed CMOS image

Abstract

This paper designs and tests a series of high speed four-transistor Pixels with 0.13µm CMOS process. The prototype sensor contains 256×128 pixels with 8 different pixel architectures. Pixel size is 10µm×10µm. The measured sensitivity is 17.3V/lux·s, conversion gain is 49.6µV/e-, non-linearity is 3.6%, read noise is 23e-and dynamic range is 60dB. The optimizing design effectively improves the performance of high speed four-transistor Pixel.