High Performance Fabry-Perot Modulator Using Interdiffused AlGaAs/GaAs Quantum Wells

Abstract

Interdiffused AlGaAs/GaAs quantum well structures are being employed as an active cavity material in the Fabry-Perot reflection type modulators. An extremely large relative reflectance change (over 14000) is predicted, higher than any value that has been reported among the available literature today. This is due to an extremely low reflectance (∼10 -5 ) at the resonance of the Fabry-Perot mode while simultaneously the change of reflectance is kept around the order of unity. The power consumption is reduced by 67% due to the highly sensitive electrons in the interdiffused wells. A wide operation wavelength range of over 100 nm is also observed.