High‐speed modulation of GaAs/AlGaAs multiple‐quantum‐well (MQW) asymmetric Fabry‐Perot (ASFP) reflection modulator

Abstract

Abstract We report the high‐frequency performance of GaAs/AlGaAs multiple‐quantum‐well‐ (MQW‐) based asymmetric Fabry‐Perot (ASFP) reflection modulator. The measured frequency response bandwidth of the modulator was ∼600 MHz at an applied voltage of only 5 V at a wavelength of ∼854 nm. The differential contrast of the modulator was 4.0 at an applied voltage of 12.5 at a wavelength of 863 nm. © 1994 John Wiley & Sons, Inc.