JOURNAL ARTICLE

Experimental Studies of Through-Wafer Copper Interconnect in Wafer Level MEMS Packaging

Sung Hoon Choa

Year: 2006 Journal:   Key engineering materials Vol: 324-325 Pages: 231-234   Publisher: Trans Tech Publications

Abstract

In this paper, mechanical reliability issues of copper through-wafer interconnection are investigated numerically and experimentally. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, copper diffusion phenomenon, and cleaning process. Improvement methods are also suggested.

Keywords:
Wafer Interconnection Materials science Copper Microelectromechanical systems Reliability (semiconductor) Wafer-level packaging Cracking Optoelectronics Copper interconnect Wafer-scale integration Wafer bonding Etching (microfabrication) Electromigration Electronic engineering Metallurgy Composite material Engineering

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Topics

3D IC and TSV technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Copper Interconnects and Reliability
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
Electronic Packaging and Soldering Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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