High power 1.017-μm strained-layer quantum well lasers grown by metalorganic chemical-vapor deposition

Abstract

We have fabricated InGaAs/GaAs/InGaP strained-layer single quantum well (SLSQW) lasers emitting at 1.017 μm, which are suitable pumping sources for Pr3+-doped fluoride 1.3-μm fiber amplifiers, grown by metalorganic chemical-vapor deposition (MOCVD). A very low threshold current density of 80 A/cm2 was obtained for the broad-area lasers. This value is comparable to that of 0.98-μm SLSQW lasers. Continuous wave light output power of over 100 mW was achieved on the 2-μm-wide ridge waveguide lasers.