JOURNAL ARTICLE
Polarisation dependent interband optical absorption in strained nonsquare InGaAs/GaAs quantum well
Joseph MicallefE.H. LiB.L. Weiss
Year: 1992 Journal: Electronics Letters Vol: 28 (6)Pages: 526-528 Publisher: Institution of Engineering and Technology
Abstract
Results of the effects of an error-function compositional profile, which simulates the effects of disordering, in a strained quantum well structure on the polarisation dependent interband absorption coeflicient are presented. Strain and disordering can be combined in quantum well structures to tailor the absorption edge to desired wavelengths.
Keywords:
Quantum well Absorption (acoustics) Absorption edge Materials science Optoelectronics Wavelength Quantum Enhanced Data Rates for GSM Evolution Gallium arsenide Function (biology) Optics Physics Band gap Quantum mechanics Computer science Telecommunications Laser
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3
Cited By
0.21
FWCI (Field Weighted Citation Impact)
2
Refs
0.49
Citation Normalized Percentile
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Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Semiconductor Lasers and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Photonic and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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