Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC

Abstract

Single-crystal gallium nitride was grown on each of the two polar {0001} planes of 6H-silicon carbide substrates utilizing metal-organic vapor-phase epitaxy. The substrate polarity is clearly shown to strongly influence the surface morphology and the photoluminescence property of the layer. The examination of the layer surfaces using x-ray photoelectron spectroscopy revealed that {0001} GaN grown on the basal planes of SiC changes its polarity in accordance with the substrate polarity.