InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy

Akito Kuramata; K. Domen; Reiko Soejima; K. Horino; S. Kubota; T. Tanahashi

doi:10.1557/proc-482-1185

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InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy

Akito Kuramata K. Domen Reiko Soejima K. Horino S. Kubota T. Tanahashi

Year: 1997 Journal: MRS Proceedings Vol: 482 Publisher: Cambridge University Press

DOI: 10.1557/proc-482-1185

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Keywords:

Materials science Optoelectronics Metalorganic vapour phase epitaxy Epitaxy Diode Substrate (aquarium) Laser Layer (electronics) Doping Optics Composite material

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy

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