JOURNAL ARTICLE

(Invited) The Past, Present and Future of High-k/Metal Gates

Abstract

Like other technology components of the semiconductor industry, the high-k/metal gate has also continued innovation since its introduction to the 45 nm node. In order to fulfill the ever-increasing power/performance requirements for the future devices, new device architectures are being introduced and the high-k/metal gate should evolve in accordance. In this paper, the development history of the high-k/metal gate stack will be reviewed and the qualities required for the high-k/metal gate stack to match with the future devices will be discussed.

Keywords:
Stack (abstract data type) Metal gate Electrical engineering High-κ dielectric Logic gate Computer science Engineering physics Electronic engineering Node (physics) Power (physics) Materials science Engineering Gate oxide Transistor Physics

Metrics

24
Cited By
2.48
FWCI (Field Weighted Citation Impact)
0
Refs
0.91
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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