Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

Hyonju Kim; Thomas Andersson

doi:10.1016/s0921-4526(01)00668-8

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Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

Hyonju Kim Thomas Andersson

Year: 2001 Journal: Physica B Condensed Matter Vol: 308-310 Pages: 93-97 Publisher: Elsevier BV

DOI: 10.1016/s0921-4526(01)00668-8

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Keywords:

Sputtering Molecular beam epitaxy Sapphire Epitaxy Substrate (aquarium) Materials science Layer (electronics) Secondary ion mass spectrometry Diffraction Atomic force microscopy Analytical Chemistry (journal) Crystallography Chemistry Ion Thin film Optics Nanotechnology Geology Physics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

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