Wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy

С. В. Новиков; C. R. Staddon; R. E. L. Powell; А. В. Акимов; F. Luckert; P. R. Edwards; Robert Martin; A. J. Kent; C. T. Foxon

doi:10.1016/j.jcrysgro.2011.03.016

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Wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy

С. В. Новиков C. R. Staddon R. E. L. Powell А. В. Акимов F. Luckert P. R. Edwards Robert Martin A. J. Kent C. T. Foxon

Year: 2011 Journal: Journal of Crystal Growth Vol: 322 (1)Pages: 23-26 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2011.03.016

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Keywords:

Wurtzite crystal structure Molecular beam epitaxy Epitaxy Materials science Monolayer Ternary operation Substrate (aquarium) Optoelectronics Crystal growth Wafer Crystal (programming language) Crystallography Chemistry Layer (electronics) Nanotechnology Zinc Metallurgy Biology

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy

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