Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

Julien Dupuis; Erwann Fourmond; D. Ballutaud; N. Bérerd; M. Lemiti

doi:10.1016/j.tsf.2010.09.036

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Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

Julien Dupuis Erwann Fourmond D. Ballutaud N. Bérerd M. Lemiti

Year: 2010 Journal: Thin Solid Films Vol: 519 (4)Pages: 1325-1333 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2010.09.036

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Keywords:

Plasma-enhanced chemical vapor deposition Silicon oxynitride Elastic recoil detection Passivation Silane Silicon nitride Materials science Chemical vapor deposition Ellipsometry Silicon Annealing (glass) Crystalline silicon Silicon oxide Analytical Chemistry (journal) Chemical engineering Thin film Chemistry Nanotechnology Optoelectronics Composite material Layer (electronics)

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

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