JOURNAL ARTICLE
Photomagnetic Anneal Properties of Silicon-Doped Yttrium Iron Garnet
R. F. PearsonA. D. AnnisP. Kompfner
Year: 1968 Journal: Physical Review Letters Vol: 21 (27)Pages: 1805-1807 Publisher: American Physical Society
Abstract
Torque measurements have been made at 4.2\ifmmode^\circ\else\textdegree\fi{}K on crystals of silicon-doped yttrium iron garnet which were irradiated with infrared light. The radiation caused large photomagnetic anneal effects which were found to depend on the plane of polarization of the light.
Keywords:
Materials science Yttrium Yttrium iron garnet Doping Silicon Irradiation Annealing (glass) Infrared Optoelectronics Condensed matter physics Optics Metallurgy Nuclear physics Physics
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38
Cited By
2.96
FWCI (Field Weighted Citation Impact)
5
Refs
0.92
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Is in top 1%
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Citation History
Topics
Magneto-Optical Properties and Applications
Physical Sciences → Engineering → Electrical and Electronic Engineering
Optical Polarization and Ellipsometry
Physical Sciences → Engineering → Biomedical Engineering
Photonic and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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