Resistivity decrease due to electron spin resonance in the metallic region of heavily phosphorous doped silicon

Kazuo Morigaki; Naoki Kishimoto; D. Lépine

doi:10.1016/0038-1098(75)90244-6

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Resistivity decrease due to electron spin resonance in the metallic region of heavily phosphorous doped silicon

Kazuo Morigaki Naoki Kishimoto D. Lépine

Year: 1975 Journal: Solid State Communications Vol: 17 (8)Pages: 1017-1019 Publisher: Elsevier BV

DOI: 10.1016/0038-1098(75)90244-6

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Keywords:

Electron paramagnetic resonance Doping Electrical resistivity and conductivity Metal Silicon Condensed matter physics Spin (aerodynamics) Materials science Electron Resonance (particle physics) Microwave Nuclear magnetic resonance Atomic physics Physics Metallurgy

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum and electron transport phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Resistivity decrease due to electron spin resonance in the metallic region of heavily phosphorous doped silicon

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