JOURNAL ARTICLE
Resistivity Decrease Due to Electron Spin Resonance in the Metallic Region of Heavily Phosphorus-Doped Silicon
Year: 1977 Journal: Journal of the Physical Society of Japan Vol: 42 (1)Pages: 137-145 Publisher: Physical Society of Japan
Abstract
A resistivity decrease due to ESR has been observed in the metallic concentration region of P-doped Si at temperatures 1.5–4.2 K. This result is discussed in terms of the spin-dependent transport, the ESR-associated cavity loss effect and the resistivity decrease effect associated with the localized region. The results of the resistivity changes due to ESR and also due to microwave irradiation at off resonance suggest that the localized region plays an important role for these phenomena even in metallic samples of P-doped Si.
Keywords:
Electrical resistivity and conductivity Electron paramagnetic resonance Doping Materials science Metal Condensed matter physics Silicon Resonance (particle physics) Spin (aerodynamics) Microwave Electron Nuclear magnetic resonance Atomic physics Optoelectronics Physics Metallurgy
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11
Cited By
0.74
FWCI (Field Weighted Citation Impact)
15
Refs
0.65
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Citation History
Topics
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Thin-Film Transistor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon Nanostructures and Photoluminescence
Physical Sciences → Materials Science → Materials Chemistry
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