Temperature anomalies of Schottky-barrier diodes on n-type silicon

Abstract

Experimental investigations of the temperature dependence of I-V and C-V characteristics of Schottky-barrier diodes lead to deviations from the thermionic-emission model. The barrier height and the ideality factor determined from forward I-V plots of Al, Au, and Pt Schottky contacts on n-Si strongly depend on temperature. Experimental results of forward I-V characteristics, Richardson plots, and reverse C-V data are given. An excess temperature is used as a parameter to describe the observed anomalies according to Levine’s analysis.