JOURNAL ARTICLE
Schottky barrier of nonuniform contacts to n-type and p-type silicon
Year: 1982 Journal: Journal of Applied Physics Vol: 53 (6)Pages: 4285-4288 Publisher: American Institute of Physics
Abstract
A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.
Keywords:
Thermionic emission Schottky diode Metal–semiconductor junction Diode Silicon Schottky barrier Optoelectronics Condensed matter physics Materials science Wide-bandgap semiconductor Band gap Voltage Current (fluid) Type (biology) Schottky effect Physics Electron Quantum mechanics Thermodynamics
Metrics
29
Cited By
1.89
FWCI (Field Weighted Citation Impact)
21
Refs
0.84
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
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