JOURNAL ARTICLE
Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy
L. AinaM. MattinglyLisa Stecker
Year: 1988 Journal: Applied Physics Letters Vol: 53 (17)Pages: 1620-1622 Publisher: American Institute of Physics
Abstract
Photoluminescence from AlInAs/InP quantum wells and single heterojunctions is reported for the first time. An emission centered around 1.1 eV which is most intense in multiquantum well structures, is shown to originate from confined-particle transitions involving spatially separated electrons and holes in quantum wells in the InP and AlInAs, respectively. The AlInAs/InP heterostructure is shown to have a staggered band lineup with an effective band gap of 1.06 eV.
Keywords:
Photoluminescence Heterojunction Quantum well Optoelectronics Epitaxy Materials science Vapor phase Electron Band gap Condensed matter physics Chemistry Optics Physics Nanotechnology Laser
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62
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1.88
FWCI (Field Weighted Citation Impact)
8
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0.86
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Citation History
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Nanowire Synthesis and Applications
Physical Sciences → Engineering → Biomedical Engineering
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