Photoluminescence and Raman Scattering of Electrochemically Deposited CdS Films

Abstract

CdS films were electrochemically deposited from acidic solutions containing CdSO 4 and Na 2 S 2 O 3 . Photoluminescence spectra of these films were measured using the 325 nm line of a He–Cd laser as the light source at 77 K. For the films annealed at 300° C, we observed overlapping peaks at 488 and 502 nm. The peak at 488 nm was assigned to the band-edge emission of CdS. The peak at 502 nm was thought to be due to point defects generated by annealing. As the annealing temperature was raised, the band-edge emission became weaker and the luminescence due to the point defects shifted to longer wavelengths. These results were compared with the results of Raman scattering.