Abstract

In this paper a methodology based on fracture mechanics has been used to investigate the chip package interaction of ultra low-k/copper interconnect. When a wafer is diced into chips, defects can be generated at the edge of the chips. Under the thermal stress from the package the defects can propagate into the dielectric and cause the chip failure.

Keywords:
Interconnection Chip-scale package Wafer Materials science Chip Enhanced Data Rates for GSM Evolution System in package Integrated circuit packaging Wafer-level packaging Dielectric Copper Optoelectronics Electronic engineering Three-dimensional integrated circuit Electronic packaging Computer science Electrical engineering Integrated circuit Composite material Engineering Metallurgy Telecommunications

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Topics

3D IC and TSV technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Electronic Packaging and Soldering Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Copper Interconnects and Reliability
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
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