Metalorganic chemical vapor deposition growth of high-quality AlGaAs using dimethylethylamine alane and triethylgallium–dimethylethylamine adduct

M. Miyashita; H. Kizuki; M. Tsugami; N. Fujii; Y. Mihashi; S. Takamiya

doi:10.1016/s0022-0248(98)00351-0

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Metalorganic chemical vapor deposition growth of high-quality AlGaAs using dimethylethylamine alane and triethylgallium–dimethylethylamine adduct

M. Miyashita H. Kizuki M. Tsugami N. Fujii Y. Mihashi S. Takamiya

Year: 1998 Journal: Journal of Crystal Growth Vol: 192 (1-2)Pages: 79-83 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(98)00351-0

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Keywords:

Triethylgallium Metalorganic vapour phase epitaxy Chemical vapor deposition Chemistry Analytical Chemistry (journal) Photoluminescence Impurity Carbon fibers Adduct Inorganic chemistry Layer (electronics) Materials science Epitaxy Optoelectronics Organic chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Metalorganic chemical vapor deposition growth of high-quality AlGaAs using dimethylethylamine alane and triethylgallium–dimethylethylamine adduct

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