Growth study of AlGaAs using dimethylethylamine alane as the aluminum precursor

H.Q. Hou; W.G. Breiland; B. E. Hammons; R. M. Biefeld; K. C. Baucom; R. A. Stall

doi:10.1007/s11664-997-0016-9

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Growth study of AlGaAs using dimethylethylamine alane as the aluminum precursor

H.Q. Hou W.G. Breiland B. E. Hammons R. M. Biefeld K. C. Baucom R. A. Stall

Year: 1997 Journal: Journal of Electronic Materials Vol: 26 (10)Pages: 1178-1183 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-997-0016-9

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Keywords:

Triethylgallium Trimethylgallium Arsine Photoluminescence Chemistry Analytical Chemistry (journal) Substrate (aquarium) Wafer Growth rate Layer (electronics) Materials science Metalorganic vapour phase epitaxy Optoelectronics Epitaxy Phosphine Catalysis

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Growth study of AlGaAs using dimethylethylamine alane as the aluminum precursor

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