JOURNAL ARTICLE

Growth study of AlGaAs using dimethylethylamine alane as the aluminum precursor

H.Q. HouW.G. BreilandB. E. HammonsR. M. BiefeldK. C. BaucomR. A. Stall

Year: 1997 Journal:   Journal of Electronic Materials Vol: 26 (10)Pages: 1178-1183   Publisher: Springer Science+Business Media
Keywords:
Triethylgallium Trimethylgallium Arsine Photoluminescence Chemistry Analytical Chemistry (journal) Substrate (aquarium) Wafer Growth rate Layer (electronics) Materials science Metalorganic vapour phase epitaxy Optoelectronics Epitaxy Phosphine Catalysis

Metrics

3
Cited By
0.64
FWCI (Field Weighted Citation Impact)
10
Refs
0.68
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
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