Single and Dual nc-ITO and nc-ZnO Embedded ZrHfO High-k Nonvolatile Memories

Abstract

MOS capacitors containing singe and dual nanocrystalline ITO and ZnO embedded in the Zr-doped HfO2 high-k gate dielectric were fabricated and characterized for nonvolatile memory functions. The nc-ITO and nc-ZnO embedded devices show mainly hole and electron trapping characteristics, respectively. The dual-layer nc-ITO and nc-ZnO embedded capacitors have more than double charge trapping capacities and faster charge rates than the single-layer embedded capacitors.