Dc current transport behavior in amorphous GeSe films

Doo Seok Jeong; Goon-Ho Park; Hyungkwang Lim; Cheol Seong Hwang; Suyoun Lee; Byung‐ki Cheong

doi:10.1007/s00339-011-6283-6

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Dc current transport behavior in amorphous GeSe films

Doo Seok Jeong Goon-Ho Park Hyungkwang Lim Cheol Seong Hwang Suyoun Lee Byung‐ki Cheong

Year: 2011 Journal: Applied Physics A Vol: 102 (4)Pages: 1027-1032 Publisher: Springer Science+Business Media

DOI: 10.1007/s00339-011-6283-6

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Keywords:

Amorphous solid Materials science Thermal conduction Delocalized electron Electrode Condensed matter physics Insulator (electricity) Relaxation (psychology) Current (fluid) Voltage Metal Optoelectronics Chemistry Electrical engineering Composite material Crystallography Physics

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Phase-change materials and chalcogenides

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Dc current transport behavior in amorphous GeSe films

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