HIGH-FIELD PHOTOCONDUCTIVITY OF AMORPHOUS GeTe and GeSe FILMS

P.J. Stiles; L. L. Chang; L. Esaki; Ray Tsu

doi:10.1063/1.1653033

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HIGH-FIELD PHOTOCONDUCTIVITY OF AMORPHOUS GeTe and GeSe FILMS

P.J. Stiles L. L. Chang L. Esaki Ray Tsu

Year: 1970 Journal: Applied Physics Letters Vol: 16 (10)Pages: 380-382 Publisher: American Institute of Physics

DOI: 10.1063/1.1653033

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Abstract

The photoconductivity edge in amorphous films of GeTe or GeSe is found to shift toward lower photon energies with the application of high electric fields. Electrical measurements indicate that the shift is a bulk effect, not due to junctions at the contact-semiconductor interface.

Keywords:

Photoconductivity Amorphous solid Materials science Amorphous semiconductors Condensed matter physics Electric field Semiconductor Enhanced Data Rates for GSM Evolution Optoelectronics Crystallography Chemistry Physics Silicon

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Phase-change materials and chalcogenides

Physical Sciences → Materials Science → Materials Chemistry

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

HIGH-FIELD PHOTOCONDUCTIVITY OF AMORPHOUS GeTe and GeSe FILMS

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