Indium-doped zinc oxide thin films prepared by rf magnetron sputtering

I. Shih; C. X. Qiu

doi:10.1063/1.335962

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Indium-doped zinc oxide thin films prepared by rf magnetron sputtering

I. Shih C. X. Qiu

Year: 1985 Journal: Journal of Applied Physics Vol: 58 (6)Pages: 2400-2401 Publisher: American Institute of Physics

DOI: 10.1063/1.335962

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Abstract

Indium-doped zinc oxide films have been prepared by rf magnetron sputtering, using ZnO targets containing up to 10 wt. % In2O3. Room temperature resistivity of the deposited films was found to decrease by about four orders of magnitude as the In2O3 content was increased from 0 to 10 wt. %.

Keywords:

Indium Zinc Sputter deposition Materials science Doping Electrical resistivity and conductivity Sputtering Thin film Oxide Cavity magnetron Optoelectronics Analytical Chemistry (journal) Inorganic chemistry Metallurgy Nanotechnology Chemistry Electrical engineering

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Indium-doped zinc oxide thin films prepared by rf magnetron sputtering

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