Nanopores and quantum dots by selective area metalorganic chemical vapor deposition

J. J. Coleman

doi:10.1109/ipcon.2012.6358853

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Nanopores and quantum dots by selective area metalorganic chemical vapor deposition

J. J. Coleman

Year: 2012 Pages: 776-777

DOI: 10.1109/ipcon.2012.6358853

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Abstract

We describe the metalorganic chemical vapor deposition and patterning by electron beam lithography and selective area growth or wet chemical etching of quantum dot and inverted quantum dot (nanopore) structures suitable for diode lasers.

Keywords:

Chemical vapor deposition Nanopore Quantum dot Electron-beam lithography Etching (microfabrication) Metalorganic vapour phase epitaxy Optoelectronics Materials science Lithography Isotropic etching Nanotechnology Deposition (geology) Resist Epitaxy

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Nanopores and quantum dots by selective area metalorganic chemical vapor deposition

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