GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition

Abstract

New GaAs quantum dot structures, called tetrahedral quantum dots (TQDs), are proposed to make a zero-dimensional electron-hole system. The TQDs are surrounded by crystallographic facets fabricated using selective area metalorganic chemical vapor deposition (MOCVD) on (111)B GaAs substrates. The calculated energy sublevel structures of zero-dimensional electrons in a GaAs TQD show large quantum size effects, because electrons are confined three dimensionally. GaAs and AlGaAs tetrahedral facet structures on (111)B GaAs substrates partially etched into a triangular shape were grown using MOCVD. Tetrahedral growth with {110} facets occurs in the triangular areas. The cathodoluminescence intensity map for GaAs tetrahedrons buried in AlGaAs shows the tetrahedral dot array.