JOURNAL ARTICLE
Influence of the oxide charge build-up during Fowler-Nordheim stress on the current-voltage characteristics of metal-oxide-semiconductor capacitors
Year: 1995 Journal: Journal of Non-Crystalline Solids Vol: 187 Pages: 175-180 Publisher: Elsevier BV
Keywords:
Oxide Materials science Quantum tunnelling Voltage Capacitance Capacitor Stress (linguistics) Current (fluid) Cathode Charge (physics) Optoelectronics Substrate (aquarium) Impact ionization Semiconductor Condensed matter physics Electrical engineering Ionization Chemistry Electrode Physics Ion Engineering Metallurgy
Metrics
4
Cited By
0.00
FWCI (Field Weighted Citation Impact)
8
Refs
0.16
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences → Engineering → Electrical and Electronic Engineering
Related Documents
JOURNAL ARTICLE
Charge generation in metal-oxide-semiconductor capacitors during Fowler-Nordheim stress
S. ElrharbiM. JourdainA. MeinertzhagenA. El-HdiyC. Petit
Journal: Springer Link (Chiba Institute of Technology) Year: 1994
JOURNAL ARTICLE
Charge generation in metal-oxide-semiconductor capacitors during Fowler-Nordheim stress
Simon ElrharbiM. JourdainA. MeinertzhagenA. El HdiyC. Petit
Journal: Journal de Physique III Year: 1994 Vol: 4 (6)Pages: 1045-1051
JOURNAL ARTICLE
The effect of Fowler–Nordheim tunneling current on thin SiO2 metal-oxide-semiconductor capacitors
Takashi HosoiMitsuru AkizawaSatoru Matsumoto
Journal: Journal of Applied Physics Year: 1985 Vol: 57 (6)Pages: 2072-2076
JOURNAL ARTICLE
High-field Fowler - Nordheim stress of n-type silicon carbide metal-oxide-semiconductor capacitors
Edwige BanoT. OuisseC. LeonhardA. GölzE.G. Stein von Kamienski
Journal: Semiconductor Science and Technology Year: 1997 Vol: 12 (5)Pages: 525-528
JOURNAL ARTICLE
Oxide Degradation of Wafer Bonded Metal Oxide Semiconductor Capacitors Following Fowler‐Nordheim Electron Injection
Stefan BengtssonAnders JauhiainenOlof Engström
Journal: Journal of The Electrochemical Society Year: 1992 Vol: 139 (8)Pages: 2302-2306