Charge generation in metal-oxide-semiconductor capacitors during Fowler-Nordheim stress

Abstract

Experimental ob~ervation~ are reported cnncerning the influence of ~ome technologi- cal processes on the generation rate of positive oxide charge and interface states during high electric field stress. Our results on positive oxide charge generation are consistent with a model of impact ionization in silicon dioxide and we think that acoustic-phonon runaway is the controlling process for impact ionization in SiO~ in films thicker than 20.0 nm at fields higher than 7 MV/cm. We have found that the positive charge is mainly due to trapped holes when the electrons are injected at the gate/SiO~ interface. ~~~~~~ ~'~~ (l)