Growth and properties of III–V compound semiconductor heterostructure nanowires

Abstract

We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs substrates by metal organic chemical vapor deposition via vapor-liquid-solid mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, non-radiative surface and bulk defects, carrier lifetime and strain effects on the bandgap energy.