Growth and properties of III–V compound semiconductor heterostructure nanowires

Qiuming Gao; Hark Hoe Tan; Howard E. Jackson; Leigh M. Smith; J.M. Yarrison-Rice; Jin Zou; C. Jagadish

doi:10.1088/0268-1242/27/5/059501

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Growth and properties of III–V compound semiconductor heterostructure nanowires

Qiuming Gao Hark Hoe Tan Howard E. Jackson Leigh M. Smith J.M. Yarrison-Rice Jin Zou C. Jagadish

Year: 2012 Journal: Semiconductor Science and Technology Vol: 27 (5)Pages: 059501-059501 Publisher: IOP Publishing

DOI: 10.1088/0268-1242/27/5/059501

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Keywords:

Nanowire Heterojunction Semiconductor Compound semiconductor Materials science Optoelectronics Semiconductor materials Nanotechnology Chemistry Epitaxy Layer (electronics)

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Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth and properties of III–V compound semiconductor heterostructure nanowires

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