Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers
Koichi KoyamaKeisuke OhdairaHideki Matsumura
Abstract
Catalytic chemical vapor deposition (Cat-CVD), also called hot-wire CVD, yields silicon-nitride/amorphous-silicon (SiNx/a-Si) stacked layers with remarkably low surface recombination velocities (SRVs) of lower than 1.5 cm/s for n-type crystalline Si (c-Si) wafers, and lower than 9.0 cm/s for p-type wafers. The temperature throughout the formation of stacked layers is lower than 250 °C. The usage of a-Si films significantly enhances the effective carrier lifetime of c-Si wafers, and SiNx films are also essential for reducing SRVs to such low levels.
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