Annealing behavior of silicon nitride and silicon oxynitride films prepared by ECR plasma CVD method

Takeshi Kamada; Takashi Hirao; Masatoshi Kitagawa; Kentaro Setsune; Kiyotaka Wasa; Tomio Izumi

doi:10.1016/0169-4332(88)90421-7

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Annealing behavior of silicon nitride and silicon oxynitride films prepared by ECR plasma CVD method

Takeshi Kamada Takashi Hirao Masatoshi Kitagawa Kentaro Setsune Kiyotaka Wasa Tomio Izumi

Year: 1988 Journal: Applied Surface Science Vol: 33-34 Pages: 1094-1100 Publisher: Elsevier BV

DOI: 10.1016/0169-4332(88)90421-7

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Keywords:

Electron cyclotron resonance Annealing (glass) Silicon nitride Materials science Silicon oxynitride Nitride Microwave Electron paramagnetic resonance Silicon Analytical Chemistry (journal) Plasma Chemistry Optoelectronics Nanotechnology Nuclear magnetic resonance Composite material

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Annealing behavior of silicon nitride and silicon oxynitride films prepared by ECR plasma CVD method

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