Oxidation of Si(111) promoted by K multilayers: K and SiO2 islands

B. Lamontagne; F. Sèmond; A. Adnot; Daniel Guay; Denis Roy

doi:10.1007/bf01538388

ScienceGate Book Chapters

JOURNAL ARTICLE

Oxidation of Si(111) promoted by K multilayers: K and SiO2 islands

B. Lamontagne F. Sèmond A. Adnot Daniel Guay Denis Roy

Year: 1995 Journal: Applied Physics A Vol: 61 (2)Pages: 187-191 Publisher: Springer Science+Business Media

DOI: 10.1007/bf01538388

Get Full-Text PDF Get Analytical Report

Keywords:

Overlayer Potassium Chemistry Monolayer Oxygen Desorption Alkali metal Metal Inorganic chemistry Adsorption Analytical Chemistry (journal) Chemical engineering Physical chemistry Environmental chemistry Organic chemistry

Metrics

Cited By

0.88

FWCI (Field Weighted Citation Impact)

Refs

0.76

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Oxidation of Si(111) promoted by K multilayers: K and SiO2 islands

Metrics

Topics

Related Documents

Oxidation of Si(1?1?1) promoted by K multilayers: K and SiO2 islands

Na-promoted oxidation Si(111)

Na-promoted oxidation of Si(111)

X-ray photoelectron spectroscopic study of Si(111) oxidation promoted by potassium multilayers under low O2 pressures

Potassium-promoted oxidation of Si(111) at elevated temperatures