Misfit dislocations in annealed Si1−xGex/Si heterostructures

C. G. Tuppen; C. J. Gibbings

doi:10.1016/0040-6090(89)90438-0

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Misfit dislocations in annealed Si1−xGex/Si heterostructures

C. G. Tuppen C. J. Gibbings

Year: 1989 Journal: Thin Solid Films Vol: 183 (1-2)Pages: 133-139 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(89)90438-0

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Keywords:

Molecular beam epitaxy Annealing (glass) Materials science Heterojunction Nucleation Dislocation Crystallography Epitaxy Activation energy Layer (electronics) Condensed matter physics Chemistry Optoelectronics Composite material Physics

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Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Misfit dislocations in annealed Si1−xGex/Si heterostructures

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