Configuration and interaction of misfit dislocations in si1-xgex/si(001) epilayer heterostructures grown by gas-source mbe

Won Jae Lee; A. E. Staton-Bevan

doi:10.1007/bf03026072

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Configuration and interaction of misfit dislocations in si1-xgex/si(001) epilayer heterostructures grown by gas-source mbe

Won Jae Lee A. E. Staton-Bevan

Year: 1999 Journal: Metals and Materials Vol: 5 (3)Pages: 231-235 Publisher: Springer Science+Business Media

DOI: 10.1007/bf03026072

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Keywords:

Heterojunction Materials science Dislocation Transmission electron microscopy Condensed matter physics Crystallography Optoelectronics Nanotechnology Composite material Chemistry

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Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

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Configuration and interaction of misfit dislocations in si1-xgex/si(001) epilayer heterostructures grown by gas-source mbe

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