X-Ray Mask Technology

Abstract

The technology for manufacturing boron nitride x-ray masks used with a palladium anode x-ray source is described. There are important relationships between LPCVD boron nitride process parameters and critical membrane properties. The LPCVD process variables affect the alignment wavelength transmittance, membrane tension, and tension uniformity, the latter properties having significant influence on mask flatness. Subtractive patterning of the gold x-ray absorber layer is easily accomplished using tantalum layers as etch stops. Additive patterning by electroplating is a promising technique for producing x-ray masks for submicron imaging.