Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces

P Shing Ho; M. Liehr; P. E. Schmid; F. K. LeGoues; E.S. Yang; H. L. Evans; Xu Wu

doi:10.1016/0039-6028(86)90849-6

ScienceGate Book Chapters

JOURNAL ARTICLE

Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces

P Shing Ho M. Liehr P. E. Schmid F. K. LeGoues E.S. Yang H. L. Evans Xu Wu

Year: 1986 Journal: Surface Science Vol: 168 (1-3)Pages: 184-192 Publisher: Elsevier BV

DOI: 10.1016/0039-6028(86)90849-6

Get Full-Text PDF Get Analytical Report

Keywords:

Silicide Schottky barrier Microstructure Materials science Silicon Epitaxy Impurity Condensed matter physics Crystallography Chemistry Nanotechnology Optoelectronics Metallurgy Layer (electronics) Physics

Metrics

Cited By

1.06

FWCI (Field Weighted Citation Impact)

Refs

0.75

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces

Metrics

Topics

Related Documents

Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces

Schottky Barrier and Electronic States at Silicide-Silicon Interfaces

Chemical trend in silicide electronic structure and Schottky-barrier heights of silicide-silicon interfaces

On Schottky barrier inhomogeneities at silicide/silicon interfaces

Electronic states at silicide-silicon interfaces