Schottky Barrier and Electronic States at Silicide-Silicon Interfaces

P. E. Schmid; M. Liehr; F. K. LeGoues; P Shing Ho

doi:10.1557/proc-54-469

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JOURNAL ARTICLE

Schottky Barrier and Electronic States at Silicide-Silicon Interfaces

P. E. Schmid M. Liehr F. K. LeGoues P Shing Ho

Year: 1985 Journal: MRS Proceedings Vol: 54 Publisher: Cambridge University Press

DOI: 10.1557/proc-54-469

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Keywords:

Materials science Schottky barrier Silicide Electronegativity Epitaxy Condensed matter physics Silicon Fermi level Engineering physics Optoelectronics Nanotechnology Electron Chemistry Layer (electronics)

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Topics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Schottky Barrier and Electronic States at Silicide-Silicon Interfaces

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